2SC2001 transistor (npn) features power dissipation p cm : 0.6 w (tamb=25 ) collector current i cm : 0.7 a collector-base voltage v (br)cbo : 30 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v (br)cbo ic=100a , i e =0 30 v collector-emitter breakdown voltage v (br)ceo i c =10ma , i b =0 25 v emitter-base breakdown voltage v (br)ebo i e =100a, i c =0 5 v collector cut-off current i cbo v cb =30 v , i e =0 0.1 a collector cut-off current i ceo v ce =20 v , i b =0 0.1 a emitter cut-off current i ebo v eb =5 v , i c =0 0.1 a dc current gain h fe v ce =1v, i c =100ma 90 400 collector-emitter saturation voltage v ce(sat) i c =700ma, i b = 70ma 0.6 v base-emitter saturation voltage v be(sat) i c = 700ma, i b =70ma 1.2 v transition frequency f t v ce =6v, i c = 10ma f = 30mhz 50 mhz classification of h fe rank m l k range 90-180 135-270 200-400 1 2 3 to-92 1. emitter 2. collector 3. base 2SC2001 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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